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TEFT4300

Photodetector Transistors 70V 100mW 925nm

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SeekIC No. : 0082021 Detail

TEFT4300: Photodetector Transistors 70V 100mW 925nm

TEFT4300 Data Sheet

floor Price/Ceiling Price

US $ .22~.4 / Piece | Get Latest Price
Part Number:
TEFT4300
Mfg:
Vishay Semiconductors
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $.4
  • $.34
  • $.25
  • $.22
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2025/1/12

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Product Details

Quick Details

Maximum Power Dissipation : 100 mW Maximum Dark Current : 200 nA
Package / Case : T-1    

Description

Maximum Power Dissipation : 100 mW
Package / Case : T-1
Maximum Dark Current : 200 nA


Features:

· High radiant sensitivity
· Fast response times
· T1 (ø 3 mm) plastic package with IR filter
· Additional polarity sign
· Wide viewing angle j = ± 30
· Suitable for near infrared radiation
· Matches with TSUS4300 GaAs infrared emitter




Application

·Optical switches
·Counters and sorters
·Interrupters
·Tape and card readers
·Encoders
·Position sensors




Specifications

Parameter Test condition Symbol Value Unit
Collector Emitter Voltage VCEO 6 V
Emitter Collector Voltage VECO 1.5 V
Collector Current IC 20 mA
Peak Collector Current tp/T = 0.5, tp 10 ms ICM 100 mA
Total Power Dissipation Tamb 55 °C Ptot 100 mW
Junction temperature Tj 100 °C
Storage temperature range Tstg 55...+100 °C
Soldering temperature t 3 s, 2 mm from case Tsd 260 °C
Thermal Resistance Junction/Ambient RthJA 450 K/W





Description

TEFT4300 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard T1 (ø 3 mm) plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs IR emitters with 900nm). The plastic lens provides a wide viewing angle of ± 30.






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