TE28F800B3TA120

The TE28F800B3TA120 is designed as one kind of 3 volt advanced boot block flash memory device that is available in x16 will be available in 48-lead TSOP and 48-ball CSP packages. And this device is manufactured on Intel's latest 0.18 mm technology, represents a feature-rich solution at overall lower system cost.

Features of the TE28F800B3TA120 are:(1)4-Mbit density not recommended for new designs;(2)x8 not recommended for new designs;(3)Density and Footprint Upgradeable for common package is 4-, 8-, 16-, 32- and 64-Mbit Densities;(4)Standard Surface Mount Packaging: 48-Ball CSP Packages and 40- and 48-Lead TSOP Packages;(5)Automatic Power Savings Feature: Typical ICCS after Bus Inactivity;(6)Automated Program and Block Erase: Status Registers;(7)Extended Temperature Operation is -40 °C to +85 °C;(8)Low Power Consumption is 9 mA Typical Read Current;(9)Block Locking is VCC-Level Control through WP#;(10)2.7 V or 1.65 V I/O Option is Reduces Overall System Power.

The absolute maximum ratings of the TE28F800B3TA120 can be summarized as:(1)Extended Operating Temperature:40 °C to +85 °C;(2)Storage Temperature:65 °C to +125 °C;(3)Voltage On Any Pin (except VCC, VCCQ and VPP) with Respect to GND:0.5 V to +3.7 V;(4)VPP Voltage (for Block Erase and Program) with Respect to GND:0.5 V to +13.5 V;(5)VCC and VCCQ Supply Voltage with Respect to GND:0.2 V to +3.7 V;(6)Output Short Circuit Current: 100 mA. If you want to know more information such as the electrical characteristics about the TE28F800B3TA120, please download the datasheet in www.seekic.com or www.chinaicmart.com.