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TE28F200BV-B60

Features: ` Intel SmartVoltage Technology- 5 V or 12 V Program/Erase- 3.3 V or 5 V Read Operation` Very High-Performance Read- 5 V: 60 ns Access Time- 3 V: 110 ns Access Time` Low Power Consumption- Max 60 mA Read Current at 5 V- Max 30 mA Read Current at 3.3 V3.6 V` x8/x16-Selectable Input/Output...

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SeekIC No. : 004517189 Detail

TE28F200BV-B60: Features: ` Intel SmartVoltage Technology- 5 V or 12 V Program/Erase- 3.3 V or 5 V Read Operation` Very High-Performance Read- 5 V: 60 ns Access Time- 3 V: 110 ns Access Time` Low Power Consumption-...

TE28F200BV-B60 Data Sheet

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Part Number:
TE28F200BV-B60
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

` Intel SmartVoltage Technology
- 5 V or 12 V Program/Erase
- 3.3 V or 5 V Read Operation
` Very High-Performance Read
- 5 V: 60 ns Access Time
- 3 V: 110 ns Access Time
` Low Power Consumption
- Max 60 mA Read Current at 5 V
- Max 30 mA Read Current at 3.3 V3.6 V
` x8/x16-Selectable Input/Output Bus
- 28F200 for High Performance 16- or 32-bit CPUs
` x8-Only Input/Output Architecture
- 28F002B for Space-Constrained 8-bit Applications
` Optimized Array Blocking Architecture
- One 16-KB Protected Boot Block
- Two 8-KB Parameter Blocks
- 96-KB and 128-KB Main Blocks
- Top or Bottom Boot Locations
` Extended Temperature Operation
- 40 to +85
` Extended Block Erase Cycling
- 100,000 Cycles at Commercial Temp
- 10,000 Cycles at Extended Temp
` Automated Word/Byte Program and Block Erase
- Command User Interface
- Status Registers
- Erase Suspend Capability
` SRAM-Compatible Write Interface
` Automatic Power Savings Feature
` Reset/Deep Power-Down Input
- 0.2 A ICCTypical
-Provides Reset for Boot Operations
` Hardware Data Protection Feature
- Absolute Hardware-Protection for Boot Block
- Write Lockout during Power Transitions
` Industry-Standard Surface Mount Packaging
- 40-, 48-, 56-Lead TSOP
- 44-Lead PSOP
` Footprint Upgradeable to 4-Mbit and 8-Mbit Boot Block Flash Memories
` ETOX™ IV Flash Technology


Pinout

Connection Diagram


Specifications

Commercial Operating Temperature
During Read .............................. 0 to +70
During Block Erase
and Word/Byte Program ............ 0 to +70
Temperature Under Bias .........10 to +80
Extended Operating Temperature
During Read ........................... 40 to +85
During Block Erase
and Word/Byte Program ........40 to +85
Temperature Under Bias ....... 40 to +85
Storage Temperature........... 65 to +125
Voltage on Any Pin
(except VCC, VPP, A9 and RP#)
with Respect to GND ........... 2.0 V to +7.0 V(2)
Voltage on Pin RP# or Pin A9
with Respect to GND ....... 2.0 V to +13.5 V(2,3)
VPP Program Voltage with Respect
to GND during Block Erase
and Word/Byte Program .. 2.0 V to +14.0 V(2,3)
VCC Supply Voltage
with Respect to GND ............. 2.0 V to +7.0 V(2)
Output Short Circuit Current................100 mA (4)

NOTES:
1. Operating temperature is for commercial product defined by this specification.
2. Minimum DC voltage is 0.5 V on input/output pins. During transitions, this level may undershoot to 2.0 V for periods <20 ns. Maximum DC voltage on input/output pins is VCC + 0.5 V which, during transitions, may overshoot to VCC + 2.0 V for periods <20 ns.
3. Maximum DC voltage on VPP may overshoot to +14.0 V for periods <20 ns. Maximum DC voltage on RP# or A9 may overshoot to 13.5 V for periods <20 ns.
4. Output shorted for no more than one second. No more than one output shorted at a time.

 




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