TE28F200B5B80 Selling Leads, Price trend, TE28F200B5B80 DataSheet download, circuit diagram from SeekIC.com

Features: ` SmartVoltage Technology- Smart 5 Flash: 5 V Reads, 5 V or 12 V Writes- Increased Programming Throughput at 12 V VPP` Very High-Performance Read- 2-, 4-Mbit: 60 ns Access Time- 8-Mbit: 70 ns Access Time` x8 or x8/x16-Configurable Data Bus` Low Power Consumption- Max 60 mA Read Curr...

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SeekIC No. : 004517188 Detail

TE28F200B5B80: Features: ` SmartVoltage Technology- Smart 5 Flash: 5 V Reads, 5 V or 12 V Writes- Increased Programming Throughput at 12 V VPP` Very High-Performance Read- 2-, 4-Mbit: 60 ns Access Time- 8-Mbit...

TE28F200B5B80 Data Sheet

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Part Number:: TE28F200B5B80
Supply Ability:: 5000

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1~5000

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Upload time: 2024/12/27

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Product Details

Description

Features:

` SmartVoltage Technology
- Smart 5 Flash: 5 V Reads, 5 V or 12 V Writes
- Increased Programming Throughput at 12 V VPP
` Very High-Performance Read
- 2-, 4-Mbit: 60 ns Access Time
- 8-Mbit: 70 ns Access Time
` x8 or x8/x16-Configurable Data Bus
` Low Power Consumption
- Max 60 mA Read Current at 5 V
- Auto Power Savings: <1 mA Typical Standby Current
` Optimized Array Blocking Architecture
- 16-KB Protected Boot Block
- Two 8-KB Parameter Blocks
- 96-KB and 128-KB Main Blocks
- Top or Bottom Boot Locations
` Extended Temperature Operation
- 40 to +85
` Industry-Standard Packaging
- 40, 48-Lead TSOP, 44-Lead PSOP
` Extended Block Erase Cycling
- 100,000 Cycles at Commercial Temp
- 10,000 Cycles at Extended Temp
` Hardware Data Protection Feature
- Absolute Hardware-Protection for Boot Block
- Write Lockout during Power Transitions
` Automated Word/Byte Program and Block Erase
- Command User Interface
- Status Registers
- Erase Suspend Capability
` SRAM-Compatible Write Interface
` Reset/Deep Power-Down Input
- Provides Low-Power Mode and Reset for Boot Operations
` Pinout Compatible 2, 4, and 8 Mbit
` ETOX™ Flash Technology
- 0.6 ETOX IV Initial Production
- 0.4 ETOX V Later Production

Pinout

Connection Diagram

Specifications

Commercial Operating Temperature
During Read/Erase/Program...... 0 to +70
Temperature Under Bias .......10 to +80
Extended Operating Temperature
During Read/Erase/Program.. 40 to +85
Temperature Under Bias ....... 40 to +85
Storage Temperature........... 65 to +125
Voltage on Any Pin
(except V_CC, V_PP, A₉ and RP#)
with Respect to GND ........... 2.0 V to +7.0 V(2)
Voltage on Pin RP# or Pin A₉
with Respect to GND ....... 2.0 V to +13.5 V(2,3)
V_PP Program Voltage with Respect
to GND during Block Erase
and Word/Byte Program .. 2.0 V to +14.0 V(2,3)
V_CC Supply Voltage
with Respect to GND ..............2.0 V to +7.0 V(2)
Output Short Circuit Current.................100 mA (4)

Description

Intel's Smart 5 boot block flash memory family TE28F200B5B80 provides 2-, 4-, and 8-Mbit memories featuring high-density, low-cost, nonvolatile, read/write storage solutions for a wide range of applications. Their asymmetricallyblocked architecture, flexible voltage, and extended cycling provide highly flexible components suitable for embedded code execution applications, such as networking infrastructure and office automation.

Based on Intel's boot block architecture, the Smart 5 boot block memory family TE28F200B5B80 enables quick and easy upgrades for designs that demand state-of-the-art technology. This family of products comes in industrystandard packages: the 40-lead TSOP for very space-constrained 8-bit applications, 48-lead TSOP, ideal for board-constrained higher-performance 16-bit applications, and the rugged, easy to handle 44-lead PSOP.

TE28F200B5B80

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