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TE28F160S3-100

Features: ` Two 32-Byte Write Buffers- 2.7 s per Byte Effective Programming Time` Low Voltage Operation- 2.7V or 3.3V VCC- 2.7V, 3.3V or 5V VPP`100 ns Read Access Time (16 Mbit) 110 ns Read Access Time (32 Mbit)` High-Density Symmetrically-Blocked Architecture- 32 64-Kbyte Erase Blocks (16 Mbit)- ...

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SeekIC No. : 004517187 Detail

TE28F160S3-100: Features: ` Two 32-Byte Write Buffers- 2.7 s per Byte Effective Programming Time` Low Voltage Operation- 2.7V or 3.3V VCC- 2.7V, 3.3V or 5V VPP`100 ns Read Access Time (16 Mbit) 110 ns Read Access T...

TE28F160S3-100 Data Sheet

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Part Number:
TE28F160S3-100
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

` Two 32-Byte Write Buffers
- 2.7 s per Byte Effective Programming Time
` Low Voltage Operation
- 2.7V or 3.3V VCC
- 2.7V, 3.3V or 5V VPP
`100 ns Read Access Time (16 Mbit) 110 ns Read Access Time (32 Mbit)
` High-Density Symmetrically-Blocked Architecture
- 32 64-Kbyte Erase Blocks (16 Mbit)
- 64 64-Kbyte Erase Blocks (32 Mbit)
` System Performance Enhancements
- STS Status Output
` Industry-Standard Packaging
- BGA* package, SSOP, and TSOP (16 Mbit)
- BGA* package and SSOP (32 Mbit)
` Cross-Compatible Command Support
- Intel Standard Command Set
- Common Flash Interface (CFI)
- Scaleable Command Set (SCS)
` 100,000 Block Erase Cycles
` Enhanced Data Protection Features
- Absolute Protection with VPP = GND
- Flexible Block Locking
- Block Erase/Program Lockout during Power Transitions
` Configurable x8 or x16 I/O
` Automation Suspend Options
- Program Suspend to Read
- Block Erase Suspend to Program
- Block Erase Suspend to Read
` ETOX™ V Nonvolatile Flash Technology


Pinout

Connection Diagram


Specifications

Temperature under Bias ................ 40 to +85
Storage Temperature................... 65 to +125
Voltage On Any Pin
(except VCC and VPP )
......................................... 0.5V to + VCC +0.5V(1)
VCC Supply Voltage .......... 0.2V to + VCC+0.5V(1)
VPP Update Voltage during
Block Erase, Flash Write, and
Lock-Bit Configuration ................ 0.2V to +7.0V(2)
Output Short Circuit Current.....................100 mA(3)

NOTES:
1. All specified voltages are with respect to GND. Minimum DC voltage is 0.5V on input/output pins and 0.2V on VCC and VPP pins. During transitions, this level may undershoot to 2.0V for periods <20 ns. Maximum DC voltage on input/output pins and VCC is VCC +0.5V which, during transitions, may overshoot to VCC +2.0V for periods <20 ns.
2. Maximum DC voltage on VPP may overshoot to +7.0V for periods <20 ns.
3. Output shorted for no more than one second. No more than one output shorted at a time.
4. Operating temperature is for extended product defined by this specification.


Description

Intel's Word-Wide FlashFile™ memory family TE28F160S3-100 provides high-density, low-cost, non-volatile, read/write storage solutions for a wide range of applications. The Word-Wide FlashFile memories are available at various densities in the same package type. Their symmetrically-blocked architecture, flexible voltage, and extended cycling provide highly flexible components suitable for resident flash arrays, SIMMs, and memory cards.

Enhanced suspend capabilities TE28F160S3-100 provide an ideal solution for code or data storage applications. For secure code storage applications, such as networking, where code is either directly executed out of flash or downloaded to DRAM, the Word-Wide FlashFile memories offer three levels of protection: absolute protection with VPP at GND, selective block locking, and program/erase lockout during power transitions. These alternatives give designers ultimate control of their code security needs.

This family TE28F160S3-100 of products is manufactured on Intel's 0.4 m ETOX™ V process technology. It comes in the industry-standard 56-lead SSOP and BGA packages. In addition, the 16-Mb device is available in the industry-standard 56-lead TSOP package.




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