TE28F160C3TD70

The TE28F160C3TD70 is designed as one kind of Intel Advanced+ Book Block Flash Memory (C3) device that incorporates low-voltage capability (3 V read, program, and erase) with highspeed, low-power operation. And this device is available in 48-lead TSOP, 48-ball CSP, and 64-ball Easy BGA packages.

Features of the TE28F160C3TD70 are:(1)Extended Temperature Operation is 40 °C to +85 °C;(2)Low Power Consumption: 9 mA Typical Read and 7 A Typical Standby with Automatic Power Savings Feature (APS);(3)High Performance is 2.7 V to 3.6 V: 70 ns Max Access Time;(4)1.65 V2.5 V or 2.7 V3.6 V I/O Option;(5)Flexible SmartVoltage Technology;(6)128-bit Protection Register is 64 bit Unique Device Identifier and 64 bit User Programmable OTP Cells;(7)Extended Cycling Capability is Minimum 100,000 Block Erase Cycles.etc.

The absolute maximum ratings of the TE28F160C3TD70 can be summarized as:(1)Extended Operating Temperature:40 °C to +85 °C;(2)Storage Temperature:65 °C to +125 °C;(3)Voltage On Any Pin (except VCC and VPP) with Respect to GND:0.5 V to +3.7 V;(4)VPP Voltage (for Block Erase and Program) with Respect to GND:0.5 V to +13.5 V;(5)VCC and VCCQ Supply Voltage with Respect to GND:0.2 V to +3.6 V;(6)Output Short Circuit Current: 100 mA. If you want to know more information such as the electrical characteristics about the TE28F160C3TD70, please download the datasheet in www.seekic.com or www.chinaicmart.com.