Features: • Monolithic integrated C-E-free-wheel diode• HIGH SPEED technology• Planar passivation• Very short switching times• Very low switching losses• Very low dynamic saturation• Very low operating temperature• High reverse voltageApplicationElec...
TE13005D: Features: • Monolithic integrated C-E-free-wheel diode• HIGH SPEED technology• Planar passivation• Very short switching times• Very low switching losses• Very low...
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Parameter | Test Conditions | Type | Symbol | Value | Unit |
Collector-emitter voltage | TE13004D | VCEO | 300 | V | |
TE13005D | VCEO | 400 | V | ||
TE13004D | VCES | 600 | V | ||
TE13005D | VCES | 700 | V | ||
Emitter-base voltage | VEBO | 9 | V | ||
Collector current | IC | 6 | A | ||
Collector peak current | ICM | 8 | A | ||
Base current | IB | 2 | A | ||
Base peak current | IBM | 4 | A | ||
Total power dissipation | Tcase 25 | Ptot | 57 | W | |
Junction temperature | Tj | 150 | |||
Storage temperature range | Tstg | 65 to +150 |