Features: ·470 - 860 MHz ·25 VOLTS·CLASS A PUSH PULL· DESIGNED FOR HIGH POWER LINEAR .OPERATION ·HIGH SATURATED POWER CAPABILITY ·GOLD METALLIZATION ·DIFFUSED EMITTER BALLAST .RESISTORS·COMMON EMITTER CONFIGURATION ·INTERNAL INPUT MATCHING ·POUT = 14.0 W MIN. WITH 8.5 dB GAINPinoutSpecifications ...
TDS595: Features: ·470 - 860 MHz ·25 VOLTS·CLASS A PUSH PULL· DESIGNED FOR HIGH POWER LINEAR .OPERATION ·HIGH SATURATED POWER CAPABILITY ·GOLD METALLIZATION ·DIFFUSED EMITTER BALLAST .RESISTORS·COMMON EMITT...
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Symbol | Parameter | Value | Unit |
VCBO | Collector-Base Voltage | 45 | V |
VCEO | Collector-Emitter Voltage | 25 | V |
VEBO | Emitter-Base Voltage | 4.0 | V |
IC | Device Current | 2 x 2.6 | A |
PDISS | Power Dissipation | 65 | W |
TJ | Junction Temperature | +200 | |
TSTG | Storage Tempera | - 65 to +150 |
The SD1732 is a gold metallized epitaxial silicon NPN planar transistor using diffused emitter ballast resistors for high linearity Class A operation in UHF and Band IV, V television transmitters and transposers.