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TD2NK60Z-1

Features: ` TYPICAL RDS(on) = 7.2 ` EXTREMELY HIGH dv/dt CAPABILITY` ESD IMPROVED CAPABILITY` 100% AVALANCHE TESTED` NEW HIGH VOLTAGE BENCHMARK` GATE CHARGE MINIMIZEDApplication· LOW POWER BATTERY CHARGERS· SWITH MODE LOW POWER SUPPLIES(SMPS)· LOW POWER, BALLAST, CFL (COMPACT FLUORESCENT LAMPS)Spe...

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TD2NK60Z-1: Features: ` TYPICAL RDS(on) = 7.2 ` EXTREMELY HIGH dv/dt CAPABILITY` ESD IMPROVED CAPABILITY` 100% AVALANCHE TESTED` NEW HIGH VOLTAGE BENCHMARK` GATE CHARGE MINIMIZEDApplication· LOW POWER BATTERY C...

TD2NK60Z-1 Data Sheet

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Part Number:
TD2NK60Z-1
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

`  TYPICAL RDS(on) = 7.2
`  EXTREMELY HIGH dv/dt CAPABILITY
`  ESD IMPROVED CAPABILITY
`  100% AVALANCHE TESTED
`  NEW HIGH VOLTAGE BENCHMARK
`  GATE CHARGE MINIMIZED


Application

·  LOW POWER BATTERY CHARGERS
·  SWITH MODE LOW POWER SUPPLIES(SMPS)
·  LOW POWER, BALLAST, CFL (COMPACT FLUORESCENT LAMPS)


Specifications

Symbol Parameter
Value
Unit
TO-220 /
IPAK
TO-92
TO-220FP
VDS Collector-Source Voltage (VGS = 0 V)
800
V
VDGR Drain-gate Voltage (RGS = 20 k)

800
V
VGS Gate-Source Voltage
±30
V
ID Drain Current (continuous) at TC = 25
1.4
0.4
1.4
A
ID Drain Current (continuous) at TC = 100
0.77

0.25
0.77
A
IDM(`) Drain Current (pulsed)
5.6
1.6
5.6
A
PTOT Total Dissipation at TC = 25
45
3
20
W
  Derating Factor
0.36
0.025
0.16
W/
VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5K)
1500
KV
dv/dt(1) Peak Diode Recovery voltage slope
4.5
V/ns
VISO Insulation Withstand Voltage (DC)
-
-
2500
V
Tj
Tstg		 Operating Junction Temperature
Storage Temperature
-55 to 150

(`) Pulse width limited by safe operating area
(1) ISD 1.4A, di/dt 200A/s, VDD V(BR)DSS, Tj TJMAX.
(*) Limited only by maximum temperature allowed


Description

The SuperMESH™ series of the TD2NK60Z-1 is obtained through an extreme optimization of ST's well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.




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