Features: · Compact construction · No setting efforts · 2 case variations · Polycarbonate case protected against ambient light · Current Transfer Ratio (CTR) of typical 2.5%Application· Contactless optoelectronic switch, control and counterSpecifications Parameter Test Conditions Symb...
TCST1000: Features: · Compact construction · No setting efforts · 2 case variations · Polycarbonate case protected against ambient light · Current Transfer Ratio (CTR) of typical 2.5%Application· Contactless ...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Features: • Package type: Leaded• Detector type: Phototransistor• Dimensions:L 8...
· Compact construction
· No setting efforts
· 2 case variations
· Polycarbonate case protected against ambient light
· Current Transfer Ratio (CTR) of typical 2.5%
· Contactless optoelectronic switch, control and counter
Parameter |
Test Conditions |
Symbol |
Value |
Unit |
Reverse voltage |
VR |
6 |
V | |
Forward current |
IF |
60 |
mA | |
Forward surge current |
tp 10 s |
IFSM |
3 |
A |
Power dissipation |
Tamb 25 |
PV |
100 |
mW |
Junction temperature |
Tj |
100 |
| |
Collector emitter voltage |
VCEO |
70 |
V | |
Emitter collector voltage |
VECO |
7 |
V | |
Collector current |
IC |
100 |
mA | |
Power dissipation |
tp /T = 0.5, tp 10 ms |
ICM |
200 |
mW |
Power dissipation |
Tamb 25 |
PV |
150 |
mW |
Junction temperature |
|
Tj |
100 |
|
Total power dissipation |
Tamb 25 |
Ptot |
250 |
mW |
Ambient temperature range |
Tamb |
55 to +85 |
||
Storage temperature range |
Tstg |
55 to +100 |
||
Soldering temperature |
2 mm from case, t 5 s |
Tsd |
260 |
This TCST1000 has a compact construction where the emitting-light sources and the detectors are located face-to-face on the same optical axis.
The operating wavelength is 950 nm. The detector consists of a phototransistor.