TCED4100

Isolation Voltage : 5000 Vrms
Packaging : Tube
Maximum Operating Temperature : + 100 C
Minimum Operating Temperature : - 40 C
Maximum Power Dissipation : 250 mW
Input Type : DC
Maximum Forward Diode Voltage : 1.4 V
Maximum Collector Emitter Saturation Voltage : 1 V
Maximum Collector Emitter Voltage : 35 V
Current Transfer Ratio : 800 %
Maximum Collector Current : 80 mA
Package / Case : PDIP-16


Features:

Approvals:
`BSI: BS EN 41003, BS EN 60095 (BS 415),
BS EN 60950 (BS 7002),
Certificate number 7081 and 7402
`FIMKO (SETI): EN 60950,
Certificate number 11992
`Underwriters Laboratory (UL) 1577 recognized,
file number E-76222 Double Protection
`CSA (CUL) 1577 recognized,
file number E-76222 Double Protection
`VDE 0884, Certificate number 115667
VDE 0884 related features:
`Rated impulse voltage (transient overvoltage)
VIOTM = 8 kV peak
`Isolation test voltage
(partial discharge test voltage) Vpd = 1.6 kV
`Rated isolation voltage (RMS includes DC)
VIOWM = 600 VRMS (848 V peak)
`Rated recurring peak voltage (repetitive)
VIORM = 600 VRMS
`Creepage current resistance according to
VDE 0303/IEC 112
Comparative Tracking Index: CTI . 175
`Thickness through insulation . 0.75 mm
`Internal creepage distance > 4 mm
General features:
`Isolation materials according to UL94-VO
`Pollution degree 2 (DIN/VDE 0110 / resp. IEC 664)
`Climatic classification 55/100/21 (IEC 68 part
`Special construction:
Therefore, extra low coupling capacity of
typical 0.2 pF, high Common Mode Rejection
`Low temperature coefficient of CTR
`G = Leadform 10.16 mm;
provides creepage distance > 8 mm,
for TCED2100/ TCED4100 optional;
suffix letter 'G' is not marked on the optocoupler
`Coupling System U




Application

Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation):
`For appl. class I IV at mains voltage 3 300 V
`For appl. class I III at mains voltage 3 600 V
according to VDE 0884, table 2, suitable for: Switch-mode power supplies, line receiver, computer peripheral interface, microprocessor system interface.




Specifications

Parameter	TestConditions	Symbol	Value	Unit
Reverse voltage Forward current Forward surge current Power dissipation Junction temperature	tp 10 s Tamb 25	VR IF IFSM PV Tj	6 60 1.5 100 125	V mA A mW

Description

The TCED1100/ TCED2100/ TCED4100 consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead up to 16-lead plastic dual inline package.

The elements of TCED1100/ TCED2100/ TCED4100 are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output for highest safety requirements.