Specifications Symbol Parameter Value Unit VCBO Collector-BaseVoltage 60 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 4.0 V IC Device Current 15 A PDISS Power Dissipation 270 W TJ Jun...
TCC0204-125: Specifications Symbol Parameter Value Unit VCBO Collector-BaseVoltage 60 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 4.0 ...
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Symbol |
Parameter |
Value |
Unit |
VCBO |
Collector-BaseVoltage |
60 |
V |
VCEO |
Collector-Emitter Voltage |
30 |
V |
VEBO |
Emitter-Base Voltage |
4.0 |
V |
IC |
Device Current |
15 |
A |
PDISS |
Power Dissipation |
270 |
W |
TJ |
JunctionTemperature |
+200 |
°C |
TSTG |
StorageTemperature |
- 65 to +150 |
°C |
The SD1463 is a 28 V Class C gold metallized epitaxial silicon NPN planar transistor designed for UHF military and commercial equipment. The SD1463 is an internally matched, broadband de- vice optimized for operation within the 225 - 400 MHz frequencyrange.Thisdeviceutlizies diffused emitter resistors to achieve10:1 VSWR load mis- match capability at rated operating conditions.