Features: SpecificationsDescriptionTCA671 is monolithic integrated transistor arrays each consisting offive NPN transistors. The arrays are well suited for siwtching and amplifying applications up to approx. 30 MHz.Due to a uniform design, the transistor characteristics show only slight deviations...
TCA671: Features: SpecificationsDescriptionTCA671 is monolithic integrated transistor arrays each consisting offive NPN transistors. The arrays are well suited for siwtching and amplifying applications up t...
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Features: • Output current capability and the number of outputs : 155 mA x 3 outputs• ...
TCA671 is monolithic integrated transistor arrays each consisting offive NPN transistors. The arrays are well suited for siwtching and amplifying applications up to approx. 30 MHz.Due to a uniform design, the transistor characteristics show only slight deviations. The arrays are preferably intended for lamp drivers, amplifiers,pulse generators.It has four unique features: The first one is versatile use. The second one is slight VBE and B deviations. The third one is high output current. The forth one is good thermal matching.
There are some absolute maximum ratings about TCA671. Collector-base breakdown voltage(VCBO) is 45 V. Collector-emitter breakdown voltage(VCEO) is 42 V. Emitter-base breakdown voltage(VEBO) is 6 V. Collector-substrate voltage(VCS) is 70 V when Ici s 100 uA. Collector current(Ic) is 200 mA . Base current(Ib) is 10 mA . Permissible power dissipation for a single transistor(Ptot) is 300 mW. Junction temperature(Tj) is 150.Storage temperature range(Tstg) is -40 to 125.Otherwise, there are also some charactersitics about it when Ta is 25.Differential base current for transistors(IBD) is 0.5 uA typ and 1 uA max when T1 is equal to T2,VCE is 3 V, Ic is 1 mA.Base-emitter voltage(VBE) is 0.65 V typ when VCEi s3 V and Ic is 1 mA . Transition frequency (fT) is 300 MHz min and 550 MHz typ.
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