Features: SpecificationsDescription The TC7WU04F is a high speed c2Mos INVERTER fabricated with silicon gate c2Mos technology. It achives the high speed operation similar to equivalent LSTTL while maintaining the czmos low power dissipation. As the internal circuit is composed of single stage inv...
TC7WU04F: Features: SpecificationsDescription The TC7WU04F is a high speed c2Mos INVERTER fabricated with silicon gate c2Mos technology. It achives the high speed operation similar to equivalent LSTTL while m...
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The TC7WU04F is a high speed c2Mos INVERTER fabricated with silicon gate c2Mos technology. It achives the high speed operation similar to equivalent LSTTL while maintaining the czmos low power dissipation.
As the internal circuit is composed of single stage inverter, TC7WU04F can be applied for crystal oscillation. All inputs are equipped with protection circuits against static discharge or transient excess voltage.
The features of TC7WU04F are High Speed tpd=6ns at Vcc = 5V, Low Power Dissipation lcc=1A at Ta = 25, High Noise Immunity VNIH=VNIL=10% Vcc, Output Drive Capability 10 LSTTL Loads, Symmetrical Output Impedance lIOHl=lOL=4mA, Balanced Propagation Delays tpLH=tpHL, Wide Operating Voltage Range Vcc(opr)=2~6V.
The maximum ratings (Ta =25) of TC7WU04F are Supply Voltage Range(VCC) =-0.5~7V, DC Input Voltage(VIN)=-0.5~VCC+0.5V, DC Output Voltage(VOUT) =+0.5~VCC+0.5V, Input Diode Current(IIK)=20mA, Output Diode Current IOK= 20mA, DC Output Current IOUT=25mA, Power Dissipation (PD)=300mW, Storage Temperature Tstg=-65~150, Lead Temperature (10s)TL=260 .