Features: • High speed: tpd = 3.8 ns (typ.) at VCC = 5 V• Low power dissipation: ICC = 2 A (max) at Ta = 25• High noise immunity: VNIH = VNIL = 28% VCC (min)• Power down protection is provided on all inputs.• Balanced propagation delays: tpLH −∼ tpHL•...
TC7WH32FU: Features: • High speed: tpd = 3.8 ns (typ.) at VCC = 5 V• Low power dissipation: ICC = 2 A (max) at Ta = 25• High noise immunity: VNIH = VNIL = 28% VCC (min)• Power down prot...
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Characteristics |
Symbol |
Rating |
Unit |
Supply voltage range |
VCC |
−0.5~7.0 |
V |
DC input voltage |
VIN |
−0.5~7.0 |
V |
DC output voltage |
VOUT |
−0.5~VCC + 0.5 |
V |
Input diode current |
IIK |
−20 |
mA |
Output diode current |
IOK |
±20 |
mA |
DC output current |
IOUT |
±25 |
mA |
DC VCC/ground current |
ICC |
±50 |
mA |
Power dissipation |
PD |
300 (SM8) |
mW |
200 (US8) | |||
Storage temperature |
Tstg |
−65~150 |
|
Lead temperature (10 s) |
TL |
260 |
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
The TC7WH32FU is an advanced high speed CMOS 2-Input OR Gate fabricated with silicon gate CMOS technology. It achieves the high speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation. The internal circuit is composed of 4 stages including buffer output, which provide high noise immunity and stable output. An input protection circuit ensures that 0 to 7 V can be applied to the input pins without regard to the supply voltage. The TC7WH32FU can be used to interface 5 V to 3 V systems and two supply systems such as battery back up. This circuit prevents device destruction due to mismatched supply and input voltages.