TC7WH02FU

      Here are some general descriptions of the TC7WH02FU. The TC7WH02FU is an advanced high speed CMOS 2-INPUT NAND GATE fabricated with silicon gate CMOS technology. It achieves the high speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation.The internal circuit is composed of 3 stages including buffer output, which provide high noise immunity and stable output. An input protection circuit ensures that 0 to 7 V can be applied to the input pins without regard to the supply voltage. This device can be used to interface 5 V to 3 V systems and two supply systems such as battery back up. This circuit prevents device destruction due to mismatched supply and input voltage.
      Here are some features of the TC7WH02FU. The typical high speed is 3.6 ns at VCC is 5 V. The maximum low power dissipation is 2A at Ta is 25 . The minimum of the high noise immunity is 28%. The power down protection is provided on all inputs. The protection delays is balanced. The wide operating voltage ranges from 2 to 5.5 V.
      Here are some maximum ratings of the TC7WH02FU when Ta is 25 . The supply voltage range is -0.5 to 7 V. The DC input voltage is -0.5 to 7 V. The DC output voltage is -0.5 to VCC+0.5 V. The input diode current is -20 mA. The output diode current is ±20 mA.The DC output current is ± 25mA. The DC VCC/Ground current is ±50 mA. The power dissipation is 300 (FM8,SM8)/200(US8) mW. The storage temperature is -60 to 150. The lead temperature is 260.
      Here are some recommened operating conditions of the TC7WH02FU. The supply voltage range is 2 to 5.5 V. The input voltage is 0 to 5.5 V. The output voltage is 0 to VCC V. The operating temperature is -40 to 85. The input rise and fall time is 0 to 100ns/V when VCC is 3.3±0.3V, 0 to 20ns/V when VCC is 5±0.5V.