TC7W66F

      Here are some general descriptions of the TC7W66F. The TC7W66F is high speed CMOS DUAL BILATERAL SWITCH fabricated with silison gate CMOS technology. It consists of four independent high speed switches capable of controlling either digital or analog signals while maintaining the CMOS low power dissipation. Control input(C) is provided to control the switch. The switch turns ON while the C input is high, and the switch turns off while low. All inputs are equipped with protection circuits against static discharge or transient excess voltage.
      Here are some features of the TC7W66F. The typical high speed is 7ns at Vcc is 5V. The maximum of the low power dissipation is 1A at Ta is 25. The minimum of the high noise immunity is 28%. The typical low on resistance is 50 at V_CC is 9V. The typical high degree of linearity is 0.05 at V_CC is 5V. And also, pin and function is compatible with TC7W66F.
      Here are some maximum ratings of the TC7W66F when Ta is 23 . The supply voltage range is -0.5 to 13 V. The control input voltage is -0.5 to V_CC+0.5 V. The switch I/O voltage is -0.5 to V_CC+0.5 V. The control input diode current is ±20 mA. The I/O diode current is ± 20mA. The switch through current is ±25 mA. The DC V_CC/GND current is ±25 mA. The power dissipation is 300(FM8,SM8)/200(US8) mW. The storage temperature is -60 to 150. The lead temperature is 260.
      Here are some recommened operating conditions of the TC7W66F when Ta is 23 . The supply voltage range is 2 to 12 V. The control input voltage is 0 to V_CC V. The switch I/O voltage is 0 to V_CC V. The control input diode current is ±20 mA. The I/O diode current is ± 20mA. The operating temperature is -40 to 85. The input rise and fall time is 0 to 1000ns when V_CC is 2V, 0 to 500ns when V_CC is 4.5V, 0 to 400ns when V_CC is 6V, 0 to 250ns when V_CC is 10V.