Features: • High speed: tpd = 6 ns (typ.) at VCC = 5 V• Low power dissipation: ICC = 1 A (max) at Ta = 25°C• High noise immunity: VNIH = VNIL = 28% VCC (min)• Output drive capability: 10 LSTTL Loads• Symmetrical output impedance: |IOH|= IOL=4mA(min)• Balanced pr...
TC7W34FU: Features: • High speed: tpd = 6 ns (typ.) at VCC = 5 V• Low power dissipation: ICC = 1 A (max) at Ta = 25°C• High noise immunity: VNIH = VNIL = 28% VCC (min)• Output drive ca...
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Characteristics | Symbol | Rating | Unit |
Supply voltage range | VCC | -0.5~+6.0 | V |
DC input voltage | VIN | -0.5~+6.0 | V |
DC output voltage | VOUT | -0.5~VCC + 0.5 | V |
Input diode current | IIK | -20 | mA |
Output diode current | IOK | -20 | mA |
DC output current | IOUT | 50 | mA |
DC VCC/ground current | ICC | ±50 | mA |
Power dissipation | PD | 300 (TC7W34FU) | |
200 (TC7W34FK) | mW | ||
Storage temperature | Tstg | -65~+150 | |
Lead temperature (10s) | TL | 260 |
The TC7W34FU is high speed CMOS BUFFER fabricated with silicon gate CMOS technology.
The internal circuit of TC7W34FU is composed of 2 stage including buffer output, which enable high noise immunity and stable output. All inputs of TC7W34FU are equipped with protection circuits against static dichage or transient excess voltage.