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TC7W34FK

Features: • High speed: tpd = 6 ns (typ.) at VCC = 5 V• Low power dissipation: ICC = 1 A (max) at Ta = 25°C• High noise immunity: VNIH = VNIL = 28% VCC (min)• Output drive capability: 10 LSTTL Loads• Symmetrical output impedance: |IOH|= IOL=4mA(min)• Balanced pr...

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SeekIC No. : 004515040 Detail

TC7W34FK: Features: • High speed: tpd = 6 ns (typ.) at VCC = 5 V• Low power dissipation: ICC = 1 A (max) at Ta = 25°C• High noise immunity: VNIH = VNIL = 28% VCC (min)• Output drive ca...

TC7W34FK Data Sheet

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Part Number:
TC7W34FK
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• High speed: tpd = 6 ns (typ.) at VCC = 5 V
• Low power dissipation: ICC = 1 A (max) at Ta = 25°C
• High noise immunity: VNIH = VNIL = 28% VCC (min)
• Output drive capability: 10 LSTTL Loads
• Symmetrical output impedance: |IOH|= IOL=4mA(min)
• Balanced propagation delays: tpLH tpHL
• Wide operating voltage range: VCC (opr) = 2~5.5 V


Pinout

Connection Diagram


Specifications

Characteristics Symbol Rating Unit
Supply voltage range VCC -0.5~+6.0 V
DC input voltage VIN -0.5~+6.0 V
DC output voltage VOUT -0.5~VCC + 0.5 V
Input diode current IIK -20 mA
Output diode current IOK -20 mA
DC output current IOUT 50 mA
DC VCC/ground current ICC ±50 mA
Power dissipation PD 300 (TC7W34FU)  
200 (TC7W34FK) mW
Storage temperature Tstg -65~+150
Lead temperature (10s) TL 260



Description

The TC7W34FK is high speed CMOS BUFFER fabricated with silicon gate CMOS technology.

The internal circuit is composed of 2 stage including buffer output, which enable high noise immunity and stable output. All inputs of TC7W34FK are equipped with protection circuits against static dichage or transient excess voltage.




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