TC7SH04FU

The TC7SH04FU is designed as one kind of advanced high speed CMOS inverter fabricated with silicon gate CMOS technology. Operating voltage is 1 to 3 V equivalent to 1 pc or 2 pcs of dry cell battery and it achives low power dissipation. The internal circuit is composed of 3 stages including buffer output, which enables high noise immunity and stable output. All inputs are equipped with protection circuits against static discharge or transient excess voltage.

Features of the TC7SH04FU are:(1)high speed: tpd = 3.8 ns (typ.) at Vcc = 5 V;(2)low power dissipation: Icc = 2 uA (max.) at Ta = 25;(3)high noise immunity: VNIH = VNIL = 28% Vcc (min.);(4)symmetrical output impedance: 1 mA;(5)balanced propagation delay time: tPLH = tPHL;(6)low voltage operating: Vcc (opr) = 2 to 5.5 V.

The absolute maximum ratings of the TC7SH04FU can be summarized as:(1)supply voltage range: -0.5 V to 7 V;(2)DC input voltage: -0.5 V to 7 V;(3)DC output voltage: -0.5 V to Vcc+0.5 V;(4)input diode current: - 20 mA;(5)output diode current: +/- 20 mA;(6)DC output current: +/- 25 mA;(7)DC Vcc / ground current: +/- 50 mA;(8)power dissipation: 200 mW;(9)storage temperature: -65 to +150 ;(10)lead temperature (10 s): 260 . If you want to know more information such as the electrical characteristics about the TC7SH04FU, please download the datasheet in www.seekic.com or www.chinaicmart.com.