Features: Low voltage operation : VCC = 1.8~3.6 V Low power disipation : ICC < 20 µA (max) (VCC = 3.6 V, Ta = −40~85°C) High speed operation : tpd = 3.5 ns (max) (VCC = 3.0~3.6 V) : tpd = 4.2 ns (max) (VCC = 2.3~2.7 V) : tpd = 8.4 ns (max) (VCC = 1.8 V) High Output current : IOH/IOL...
TC7SAU04FU: Features: Low voltage operation : VCC = 1.8~3.6 V Low power disipation : ICC < 20 µA (max) (VCC = 3.6 V, Ta = −40~85°C) High speed operation : tpd = 3.5 ns (max) (VCC = 3.0~3.6 V) : t...
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Gates (AND / NAND / OR / NOR) 2-Input NAND Gate 5Pin High Speed
Characteristics |
Symbol |
Rating |
Unit |
Power supply voltage |
VCC |
−0.5~4.6 |
V |
DC input voltage |
VIN |
−0.5~4.6 |
V |
DC output voltage |
VOUT |
−0.5~VCC + 0.5 (Note 1) |
V |
Input diode current |
IIK |
−50 |
mA |
Output diode current |
IOK |
±50(Note 2) |
mA |
DC output current |
IOUT |
±50 |
mA |
Power dissipation |
PD |
200 |
mW |
DC VCC/ground current |
ICC |
±100 |
mA |
Storage temperature range |
Tstg |
−65~150 |
°C |