Features: • Low voltage operation : VCC = 1.8~3.6 V• High speed operation : tpd = 2.8 ns (max) (VCC = 3.0~3.6 V): tpd = 3.7 ns (max) (VCC = 2.3~2.7 V) : tpd = 7.4 ns (max) (VCC = 1.8 V)• High Output current : IOH/IOL = ±24 mA (min) (VCC = 3.0 V) : IOH/IOL = ±18 mA (min) (VCC = 2....
TC7SA08F: Features: • Low voltage operation : VCC = 1.8~3.6 V• High speed operation : tpd = 2.8 ns (max) (VCC = 3.0~3.6 V): tpd = 3.7 ns (max) (VCC = 2.3~2.7 V) : tpd = 7.4 ns (max) (VCC = 1.8 V)&...
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Gates (AND / NAND / OR / NOR) 2-Input NAND Gate 5Pin High Speed
Characteristics |
Symbol |
Rating |
Unit |
Power supply voltage |
VCC |
−0.5~4.6 |
V |
DC input voltage |
VIN |
−0.5~4.6 |
V |
DC output voltage |
VOUT |
−0.5~4.6 (Note 1) |
V |
−0.5~VCC + 0.5 (Note 2) | |||
Input diode current |
IIK |
−50 |
mA |
Output diode current |
IOK |
−50 (Note 3) |
mA |
DC output current |
IOUT |
±50 |
mA |
Power dissipation |
PD |
200 |
mW |
DC VCC/ground current |
ICC |
±100 |
mA |
Storage temperature range |
Tstg |
−65~150 |
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: VCC = 0 V
Note 2: High or low state. IOUT absolute maximum rating must be observed.
Note 3: VOUT < GND