Features: • Low-voltage operation : VDD = ±0.75~±3.5 V or 1.5~7 V• Low-current power supply : IDD (VDD = 3 V) = 60 A (typ.)• Built-in phase-compensated op-amp, obviating the need for any external device• Ultra-compact packageSpecifications Characteristics Symbol Rati...
TC75S51F: Features: • Low-voltage operation : VDD = ±0.75~±3.5 V or 1.5~7 V• Low-current power supply : IDD (VDD = 3 V) = 60 A (typ.)• Built-in phase-compensated op-amp, obviating the need f...
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Characteristics | Symbol | Rating | Unit | |
Supply voltage | VDD, VSS | 7 | V | |
Differential input voltage | DVIN | ±7 | V | |
Input voltage | VIN | VDD~VSS | V | |
Power dissipation |
TC75S51F/FU | PD | 200 | mW |
TC75S51FE | 100 | |||
Operating temperature | Topr | −40~85 | ||
Storage temperature | Tstg | −55~125 |
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the ignificant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
The TC75S51F/TC75S51FU/TC75S51FE is a CMOS singleoperation amplifier which incorporates a phase compensationcircuit. It is designed for use with a low-voltage, low-current power supply; this differentiates this device from conventional general-purpose bipolar op-amps.