DescriptionTheTC74VHCT367AF is advanced high speed CMOS HEX BUS BUFFERs fabricated with silicon gate C2MOS technology. They achieve the high speed operation similar to equivalent Bipolar Schottky while maintaining the CMOS low powe dissipation. They contain six buffers; four buffers are controlled...
TC74VHCT367AF: DescriptionTheTC74VHCT367AF is advanced high speed CMOS HEX BUS BUFFERs fabricated with silicon gate C2MOS technology. They achieve the high speed operation similar to equivalent Bipolar Schottky wh...
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The TC74VHCT367AF is advanced high speed CMOS HEX BUS BUFFERs fabricated with silicon gate C2MOS technology. They achieve the high speed operation similar to equivalent Bipolar Schottky while maintaining the CMOS low powe dissipation. They contain six buffers; four buffers are controlled by an enable input and the other two buffers are controlled by another enable input. The outputs of each buffer group are enabled when G1 and/ or G2 inputs are held low; if held high, these outputs are in a high impedance state. The TC74VHCT367AF is a non - inverting output type. Input protection and output circuit ensure that 0 to 5.5V can be applied to the input and output pins without regard to the supply voltage. These structure prevents device destruction due to mismatched supply and inputl output voltages such as battery back up, hot board insertion, etc.
The features of TC74VHCT367AF/AFN/AFT can be summarized as (1)high speed tpd=4.7ns(typ.) at VCC=5V; (2)low power dissipation ICC = 4A(MAX) at Ta = 25°C; (3)compatible with TTL outputs VIL=0.8V(MAX)/VIH =2.0V(MIN); (4)power down protection is provided on all inputs and outputs; (5)balanced propagation delays tpLH=tpHL; (6)low noise VOLP = 0.8V (Max); (7)Pin and function compatible with the 74ALS367.
The absolute maximum ratings of TC74VHCT367AF/AFN/AFT are (1)supply voltage range VCC: -0.5--7.0V; (2)DC input voltage VIN :-0.5--7.0 V; (3)input diode current IIK:-20 mA; (4)output diode current IOK:±20 mA; (5)DC output current Iout: ±25 mA; (6)DC Vcc/ground current lCC: ±75 mA; (7)power dissipation PD: 180 mW; (8)storage temperature Tst: - 65~150°C