DescriptionThe TC74VHCT04AF is a kind of advanced high speed CMOS INVERTER fabricated with sillicon gate C2MOS technology. It reaches high speed operation similar to equivalent bipolar schottky TTL when keeping the CMOS low power dissipation. The device may be used as a level converter for interfa...
TC74VHCT04AF: DescriptionThe TC74VHCT04AF is a kind of advanced high speed CMOS INVERTER fabricated with sillicon gate C2MOS technology. It reaches high speed operation similar to equivalent bipolar schottky TTL ...
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The TC74VHCT04AF is a kind of advanced high speed CMOS INVERTER fabricated with sillicon gate C2MOS technology. It reaches high speed operation similar to equivalent bipolar schottky TTL when keeping the CMOS low power dissipation. The device may be used as a level converter for interfacing 3.3 V to 5 V system. The input voltage is compatible with TTL output voltage. Input protection and output circuit ensure that 0 to 5.5V can be applied to the input and output pins without regard to the supply voltage.
There are some features of TC74VHCT04AF as follows: (1) high speed: tpd=4.7ns(typ) at VCC=5V; (2)low power dissipation: ICC=2uA(max) at Ta=25; (3)compatible with TTL outputs: VIL=0.8V(max) and VIH=2.0 V min;(4)power down protection is provided on all inputs and outputs; (5)balanced propagation delays: tpLHtpHL; (6)low noise: VOLP=1.0V(max); (7)pin and function compatible with the 74 series (74AC/HC/F/ALS/LS) 04 type.
The absolute maximum ratings of TC74VHCT04AF can be summarized as: (1)supply voltage range, VCC:-0.5V to 7.0V; (2)DC input voltage, VIN:-0.5V to 7.0V; (3)DC output voltage, VOUT:-0.5V to 7.0V or -0.5 to VCC+0.5V; (4)input diode current, IKK:-20mA; (5)output diode current, IOK: ±20mA;(6)DC output current, IOUT: ±25mA; (7)DC Vcc/ground current, ICC:±50mA; (8)power dissipation: 180mW; (9)storage temperature:-65 to 150. Then is about the recommeded operating conditions: (1)supply voltage, VCC: 4.5V to 5.5V; (2)input voltage, VIN: 0V to 5.5V; (3)output voltage, VOUT: 0V to 5.5V or 0 to VCCV; (4)operating temperature:-40 to 85; (5)input rise and fall time, dt/dV: 0 to 20ns/V.