DescriptionThe TC74VHCT00AF is a kind of advanced high speed CMOS 2-INPUT NAND GATE fabricated with sillicon gate C2MOS technology. It reaches high speed operation similar to equivalent bipolar schottky TTL when keeping the CMOS low power dissipation. The device may be used as a level converter fo...
TC74VHCT00AF: DescriptionThe TC74VHCT00AF is a kind of advanced high speed CMOS 2-INPUT NAND GATE fabricated with sillicon gate C2MOS technology. It reaches high speed operation similar to equivalent bipolar scho...
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The TC74VHCT00AF is a kind of advanced high speed CMOS 2-INPUT NAND GATE fabricated with sillicon gate C2MOS technology. It reaches high speed operation similar to equivalent bipolar schottky TTL when keeping the CMOS low power dissipation. The device may be used as a level converter for interfacing 3.3 V to 5 V system. The input voltage is compatible with TTL output voltage. Input protection and output circuit ensure that 0 to 5.5V can be applied to the input and output pins without regard to the supply voltage.
There are some features of TC74VHCT00AF as follows: (1) high speed: tpd=5.0 ns(typ) at VCC=5 V; (2)low power dissipation: ICC=2 uA(max) at Ta=25; (3)compatible with TTL outputs: VIL=0.8 V max and VIH=2.0 V min;(4)power down protection is provided on all inputs and outputs; (5)balanced propagation delays: tpLHtpHL; (6)low noise: VOLP=1.0 V (max); (7)pin and function compatible with the 74 series (74AC/HC/F/ALS/LS) 00 type.
The absolute maximum ratings of TC74VHCT00AF can be summarized as: (1)supply voltage range, VCC:-0.5 to 7.0 V; (2)DC input voltage, VIN:-0.5 to 7.0 V; (3)DC output voltage, VOUT:-0.5 to 7.0 V or -0.5 to VCC+0.5 V; (4)input diode current, IKK: -20 mA; (5)output diode current, IOK: ±20 mA;(6)DC output current, IOUT: ±25 mA; (7)DC Vcc/ground current, ICC:±50 mA; (8)power dissipation: 180 mW; (9)storage temperature:-65 to 150. Then is about the recommeded operating conditions: (1)supply voltage, VCC: 4.5 to 5.5 V; (2)input voltage, VIN: 0 to 5.5 V; (3)output voltage, VOUT: 0 to 5.5 V or 0 to VCC V; (4)operating temperature:-40 to 85; (5)input rise and fall time, dt/dV: 0 to 20 ns/V.