TC74VHC86F

The TC74VHC86F is an advanced high speed CMOS QUAD EXCLUSIVE OR GATE fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation. The feature of TC74VHC86F are as follows: (1)high speed: tpd = 4.8ns(typ.) at Vcc = 5V; (2)low power dissipation: Icc = 2A( Max.) at Ta = 25; (3)high noise immunity: VNIH = VNIL = 28% Vcc(Min.); (4)power down protection is provided on all inputs; (5)balanced propagation delays: tpLH tpHL; (6)wide operating voltage range: Vcc(opr) = 2V~5.5V; (7)low noise: VOLP = 0.8V(Max.); (8)pin and function compatible with 74ALS86.

The absolute maximum ratings of the TC74VHC86F are: (1)supply voltage range:  -0.5~7.0V; (2)DC input voltage: -0.5~7.0V; (3)DC output voltage: -0.5~Vcc + 0.5V; (4)input diode current: -20mA; (5)output diode current: ±20mA; (6)DC output current: ±25mA; (7)DC Vcc/Ground current: ±50mA; (8)power dissipation: 180mW; (9)storage temperature: -65~150.

The following is about the electrical characteristics of TC74VHC86F: (1)high-level input voltage: 1.50V min; (2)low-level input voltage: 0.50V max; (3)high-level output voltage: 1.9V min and 2.0V typical at VIN = VIH or VIL, IOH = -50A, 2.58V min at VIN = VIH or VIL, IOH = -4mA; (4)low-level output voltage: 0.0V typical and 0.1V max at VIN = VIH or VIL, IOH = 50A,  0.36V max at  VIN = VIH or VIL, IOH = 4mA; (5)input leakage current: ±0.1A at VIN = 5.5V or GND; (6)quiescent supply current: 42.0A min at VIN = Vcc or GND.