DescriptionThe TC74VHC21F is an advanced high speed CMOS 4-INPUT AND GATE fabricated with silicon gate CZMOS technology. It achieves the high speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation. The internal circuit is composed of 4 stages in...
TC74VHC21F: DescriptionThe TC74VHC21F is an advanced high speed CMOS 4-INPUT AND GATE fabricated with silicon gate CZMOS technology. It achieves the high speed operation similar to equivalent Bipolar Schottky T...
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The TC74VHC21F is an advanced high speed CMOS 4-INPUT AND GATE fabricated with silicon gate CZMOS technology. It achieves the high speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation. The internal circuit is composed of 4 stages including a buffer output, which provide high noise immunity and stable output. An input protection circuit ensures that 0 to 7V can be applied to the input pins without regard to the supply voltage. This device can be used to interface 5V to 3V systems and two supply systems such as battery back up. This circuit prevents device destruction due to mismatched supply and input voltages.
The features of TC74VHC21F can be summarized as (1)low power dissipation lpd =2A(Max.) at Ta =25°C; (2)high noise immunity: VNIL=VNIL=28% VCC(MIN); (3)power down protection is provided on all inputs; (4)balanced propagation delays tpLH=pHL; (5)wide operating voltage range VCC(opr) =2V~5.5V ; (6)pin and function compatible with 74ALS21.
The absolute maximum ratings of TC74VHC21F are (1)supply voltage range VCC: -0.5~7.0V; (2)DC input voltage VIN: - 0.5~7.0V; (3)DC output voltage VOUT: -0.5~VCC+0.5V; (4)input diode current IIK: -20 mA ; (5)output diode current IOK: ±20mA; (6)DC Output current lOUT: ±25 mA ; (7)DC VCC/ground current ICC: ±50 mA ; (8)power dissipation PD: 180 mw ; (9)storage temperature Tstg: - 65~150°C.