TC74VHC14F

DescriptionThe TC74VHC14F is an advanced high speed CMOS SCHMITT INVERTER fabricated with silicon gate C2MOS technology. The feature of TC74VHC14F are as follows: (1)high speed: tpd = 5.5ns at VCC = 5V; (2)low power dissipation: ICC = 2A at Ta = 25; (3)high noise immunity: VNIH = VNIL = 28% Vcc; (...

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SeekIC No. : 004514665 Detail

TC74VHC14F: DescriptionThe TC74VHC14F is an advanced high speed CMOS SCHMITT INVERTER fabricated with silicon gate C2MOS technology. The feature of TC74VHC14F are as follows: (1)high speed: tpd = 5.5ns at VCC =...

floor Price/Ceiling Price

Part Number:
TC74VHC14F
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/1/12

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Product Details

Description



Description

The TC74VHC14F is an advanced high speed CMOS SCHMITT INVERTER fabricated with silicon gate C2MOS technology. The feature of TC74VHC14F are as follows: (1)high speed: tpd = 5.5ns at VCC = 5V; (2)low power dissipation: ICC = 2A at Ta = 25; (3)high noise immunity: VNIH = VNIL = 28% Vcc; (4)power down protavtion is provided on all inputs; (5)balanced propagation delays: tpLHtpHL;(6)wide operating voltage range: VCC(opr.) = 2V~5.5V; (7)low noise: VOLP = 0.8V; (8)pin and function compatible with 74ALS114.

The absolute maximum ratings of the TC74VHC14F are: (1)supply voltage range:  -0.5~7.0V; (2)DC input voltage:  -0.5~7.0V; (3)DC output voltage:  -0.5~Vcc + 0.5V; (4)input diode current: -20mA; (5)output diode current: ±20mA; (6)DC output current: ±25mA; (7)DC VCC/ground current: ±50mA; (8)power dissipation: 180mW; (9)storage temperature: -65~150.

The following is about the electrical characteristics of TC74VHC14F: (1)positive threshold voltage: 2.20V max; (2)negative threshold voltage: 0.90V min; (3)hysterasis voltage: 0.30V min and 1.20V max; (4)high-level output voltage: 1.9V min and 2.0V typical at IOH = -50A, 2.58V min and 2.48V typical at IOH = -4mA; (5)low-level output voltage: 0.0V typical and 0.1V max at IOH = 50A,  0.36V max at IOH = 4mA; (6)input leakage current: ±0.1A at VIN = 5.5V or GND; (7)quiescent supply current: 2.0A min at VIN = Vcc or GND.




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