DescriptionThe TC74VHC10 is an advanced high speed CMOS 3-input nand gate fabricated with silicon gate C2MOS technology.It achieves the high speed operation similar to equivalent bipolar schottky TTL while maintaining the CMOS low power dissipation. Features of the TC74VHC10 are:(1)high speed:tpd...
TC74VHC10: DescriptionThe TC74VHC10 is an advanced high speed CMOS 3-input nand gate fabricated with silicon gate C2MOS technology.It achieves the high speed operation similar to equivalent bipolar schottky TT...
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The TC74VHC10 is an advanced high speed CMOS 3-input nand gate fabricated with silicon gate C2MOS technology.It achieves the high speed operation similar to equivalent bipolar schottky TTL while maintaining the CMOS low power dissipation.
Features of the TC74VHC10 are:(1)high speed:tpd=3.9ns(typ.)at Vcc=5V; (2)low power dissipation:Icc=2A(Max.)at Ta=25; (3)high noise immunity :Vnih=Vnil =28%Vcc(Min.); (4)power down protection is provided on all inputs; (5)balabced propagation delays :tplhtphl; (6)wide operating voltage range:Vcc(opr)=2V~5.5V; (7)pin and function compatible with 74ALS10.
The absolute maximum ratings of the TC74VHC10 can be summarized as:(1)supply voltage range:-0.5~7.0V; (2)dc input voltage:-0.5~7.0V; (3)dc output voltage:-0.5~Vcc+0.5V; (4)input diode current:-20mA; (5)output diode current:±20mA; (6)dc output current:±25mA; (7)dc Vcc/ground current:±50mA; (8)power dissipation :180mW; (9)storage temperature:-65~150.If you want to know more information such as the electrical characteristics of TC74VHC10, please download the datasheet in www.seekic.com or www.chinaicmart.com.