DescriptionThe TC74VCX14FT is a high performance CMOS schmitt inverter which is designed for use in 1.8, 2.5 or 3.3 Volt systems and it achieves high speed operation while maintaining the CMOS low power dissipation. All inputs are equipped with protection circuits against static discharge. It is a...
TC74VCX14FT: DescriptionThe TC74VCX14FT is a high performance CMOS schmitt inverter which is designed for use in 1.8, 2.5 or 3.3 Volt systems and it achieves high speed operation while maintaining the CMOS low p...
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The TC74VCX14FT is a high performance CMOS schmitt inverter which is designed for use in 1.8, 2.5 or 3.3 Volt systems and it achieves high speed operation while maintaining the CMOS low power dissipation. All inputs are equipped with protection circuits against static discharge. It is also designed with over voltage tolerant inputs and outputs up to 3.6V. Pin configuration and function are the same as the TC74VCX04 but the inputs have hysteresis and with its schmitt trigger function, the TC74VCX14 can be used as a line receivers which will receive slow input signals.
The features of TC74VCX14FT can be summarized as (1)low voltage operation: VCC = 1.8~3.6V; (2)high speed operation: tpd = TBD (max) at VCC = 3.0~3.6V/tpd = TBD (max) at VCC = 2.3~2.7V/tpd = TBD (max) at VCC = 1.8V; (3)output current: (IOH/IOL) = ±24 mA (min) at VCC = 3.0V/(IOH/IOL) = ±18mA(min) at VCC = 2.3V/(IOH/IOL) = ±6mA (min) at VCC =1.8V; (4)latch-up performance: ±300mA; (5)ESD performance: human body model > ±2000V/machine model > ±200V; (6)package: TSSOP (Thin shrink small outline package); (7)power down protection is provided on all inputs and outputs.
The absolute maximum ratings of TC74VCX14FT are (1)VCC power supply voltage: -0.5~4.6V; (2)VIN DC input voltage: -0.5~4.6V; (3)VOUT DC output voltage(VCC = 0V/high or low state, IOUT absolute maximum rating must be observed): -0.5~4.6/-0.5~VCC + 0.5V; (4)IIK input diode current: -50mA; (5)IOK output diode current(VOUT < GND, VOUT > VCC): ±50mA; (6)IOUT DC output current: ±50mA; (7)PD power dissipation: 180mW; (8)ICC/IGND DC VCC/Ground Current: ±100mA; (9)Tstg storage temperature: -65~150°C.