TC74HCT86AP

DescriptionThe TC74HCT86AP is a high speed CMOS exclusive or gate fabricated with silicon gate C2MOS technology. Features of the TC74HCT86AP are:(1)high speed:tpd=15ns(typ.)at Vcc=5V; (2)low power dissipation:Icc=1A(Max.)at Ta=25; (3)compatible with TTL outputs:Vin=2.0V(Min.z),Vil=0.8V(Max.); (4)...

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SeekIC No. : 004514530 Detail

TC74HCT86AP: DescriptionThe TC74HCT86AP is a high speed CMOS exclusive or gate fabricated with silicon gate C2MOS technology. Features of the TC74HCT86AP are:(1)high speed:tpd=15ns(typ.)at Vcc=5V; (2)low power ...

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Part Number:
TC74HCT86AP
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/1/12

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Product Details

Description



Description

The TC74HCT86AP is a high speed CMOS exclusive or gate fabricated with silicon gate C2MOS technology.

Features of the TC74HCT86AP are:(1)high speed:tpd=15ns(typ.)at Vcc=5V; (2)low power dissipation:Icc=1A(Max.)at Ta=25; (3)compatible with TTL outputs:Vin=2.0V(Min.z),Vil=0.8V(Max.); (4)output drive capability:10 LSTTL Loads; (5)symmetrical output impedance:|Ioh|=Iol=4mA(Min.); (6)pin and function compatible with 74LS686.

The absolute maximum ratings of the TC74HCT86AP can be summarized as:(1)SUPPLY VOLTAGE RANGE:-0.5~7.0V; (2)dc input voltage:-0.5~Vcc+0.5V; (3)dc output voltage:-0.5~Vcc+0.5V; (4)input diode current:±20mA; (5)output diode current:±20mA; (6)dc output current:±25mA; (7)dc Vcc/ground current:±50mA; (8)power dissipation:500(dip)*/180(sop)mW; (9)storage temperature:-65~150.If you want to know more information such as the electrical characteristics, please download the datasheet in www.seekic.com or www.chinaicmart.com.




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