DescriptionThe TC74HCT7007AP is designed as a high speed CMOS buffer fabricated with silicon gate C2MOS technology.TC74HCT7007AP has eight features. (1)High speed which would be typ 11ns at Vcc=5V. (2)Low power dissipation which means Icc=1uA max at Ta=25°C. (3)Compatible with TTL outputs which me...
TC74HCT7007AP: DescriptionThe TC74HCT7007AP is designed as a high speed CMOS buffer fabricated with silicon gate C2MOS technology.TC74HCT7007AP has eight features. (1)High speed which would be typ 11ns at Vcc=5V. ...
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The TC74HCT7007AP is designed as a high speed CMOS buffer fabricated with silicon gate C2MOS technology.
TC74HCT7007AP has eight features. (1)High speed which would be typ 11ns at Vcc=5V. (2)Low power dissipation which means Icc=1uA max at Ta=25°C. (3)Compatible with TTL outputs which means 2V min for high and 0.8V max for low. (4)Wide interfacing ability LSTTL, NMOS, CMOS. (5)Output drive capability 10 LSTTL loads. (6)Symmetrical output impedance which would be 4mA min. (7)Balanced propagation delays. (8)Pin and function compatible with 74LS07. Those are all the main features.
Some absolute maximum ratings of TC74HCT7007AP have been concluded into several points as follow. (1)Its supply voltage range would be from -0.5V to 7.0V. (2)Its DC input voltage would be from -0.5V to Vcc+0.5V. (3)Its DC output voltage would be from -0.5V to Vcc+0.5V. (4)Its input diode current would be +/-20mA. (5)Its output diode current would be +/-20mA. (6)Its DC output current would be +/-25mA. (7)Its DC Vcc/ ground current would be +/-50mA. (8)Its power dissipation would be 500mW. (9)Its storage temperature range would be from -65°C to 150°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.
Also some DC electrical characteristics of TC74HCT7007AP at Vcc=4.5V are concluded as follow. (1)Its high level input voltage would be min 2.0V. (2)Its low level input voltage would be max 0.8V. (3)Its high level output voltage would be min 4.4V and typ 4.5V at Ioh=-20uA and would be min 4.18V and typ 4.31V at Ioh=-4mA. (4)Its low level output voltage would be max 0.1V at Iol=20uA and would be max 0.26V at Iol=4mA.
TC74HCT7007AP should be noted that toshiba is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the users, when utilizing these products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a product could cause loss of human life, bodily injury or damage to property. And so on. If you have any question or suggestion or want to know more information about TC74HCT7007AP please contact us for details. Thank you!