Features: SpecificationsDescriptionThe TC74HC4066P/F is a high speed CMOS QUAD BILATERAL SWITCH fabricated with silicon gate C2MOS technology.It consists of four independent high speed switches capable of controlling either digital or analog signals with as low power dissipation as that of metal-g...
TC74HC4066P/F: Features: SpecificationsDescriptionThe TC74HC4066P/F is a high speed CMOS QUAD BILATERAL SWITCH fabricated with silicon gate C2MOS technology.It consists of four independent high speed switches capa...
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The TC74HC4066P/F is a high speed CMOS QUAD BILATERAL SWITCH fabricated with silicon gate C2MOS technology.It consists of four independent high speed switches capable of controlling either digital or analog signals with as low power dissipation as that of metal-gate C2MOS IC.C input is provided to control the switch;the switch is ON while the C input is maintained at high leyel,and the switch is OFF while at low level.
The TC74HC4066P/F has some absolute maximum ratings.When parameter is supply voltage range,the symbol is VCC,the value is -0.5 to 7,the unit is V.When parameter is DC input voltage,the symbol is VIN,the value is -0.5 to VCC+0.5,the unit is V.When parameter is DC output voltage,the symbol is VOUT,the value is -0.5 to VCC+0.5,the unit is V.When parameter is input diode current,the symbol is IIK,the value is ±20,the unit is mA.When parameter is output diode current,the symbol is IOK,the value is ±20,the unit is mA.When parameter is DC output current,the symbol is IOUT,the value is ±25,the unit is mA.When parameter is DC VCC/ground current,the symbol is ICC,the value is ±50,the unit is mA.When parameter is power dissipation,the symbol is PD,the value is 500(DIP)*/180(MEP),the unit is mW.When parameter is storage temperature,the symbol is Tstg,the value is -65 to 150,the unit is .When parameter is lead temperature 10sec,the symbol is TL,the value is 300,the unit is .
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