DescriptionThe TC74HC279A is an adviced high speed CMOS QUAD S-R LATCH frabricated with silicon gate C2MOS technology. The feature of TC74HC279A are as follows: (1)high speed: tpd = 12ns at VCC = 5V; (2)low power dissipation: ICC = 2A at Ta = 25; (3)high noise immunity: VNIH = VNIL = 28% Vcc; (4)s...
TC74HC279A: DescriptionThe TC74HC279A is an adviced high speed CMOS QUAD S-R LATCH frabricated with silicon gate C2MOS technology. The feature of TC74HC279A are as follows: (1)high speed: tpd = 12ns at VCC = 5V...
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The TC74HC279A is an adviced high speed CMOS QUAD S-R LATCH frabricated with silicon gate C2MOS technology. The feature of TC74HC279A are as follows: (1)high speed: tpd = 12ns at VCC = 5V; (2)low power dissipation: ICC = 2A at Ta = 25; (3)high noise immunity: VNIH = VNIL = 28% Vcc; (4)symmertrical output impedance: IOH = IOL = 4mA(min); (5)balanced propagation delays: tpLHtpHL; (6)wide operating voltage range: VCC(opr) = 2V~6V; (8)pin and function compatible with 74LS279.
The absolute maximum ratings of the TC74HC279A are: (1)supply voltage range: -0.5~7.0V; (2)DC input voltage: -0.5~VCC + 0.5V; (3)DC output voltage: -0.5~Vcc + 0.5V; (4)input diode current: ±20mA; (5)output diode current: ±20mA; (6)DC output current: ±25mA; (7)DC Vcc/Ground current: ±50mA; (8)power dissipation: 180mW; (9)storage temperature: -65~150.
The following is about the electrical characteristics of TC74HC279A: (1)high-level input voltage: 1.50V min; (2)low-level input voltage: 0.50V max; (3)high-level output voltage: 1.9V min and 2.0V typical at VIN = VIH or VIL, IOH = -20A, 4.4V min and 4.5V typical at VIN = VIH or VIL, IOH = -4mA; (4)low-level output voltage: 0.0V typical and 0.1V max at VIN = VIH or VIL, IOH = 20A, 0.17V min and 0.26V max at VIN = VIH or VIL, IOH = 4mA; (5)input leakage current: ±0.1A at VIN = Vcc or GND; (6)quiescent supply current: 4.0A min at VIN = Vcc or GND.