DescriptionThe TC74ACT273 is an adviced high speed CMOS OCTALD-TYPE FILP FLOP frabricated with silicon gate and double-layer metal wiring C2MOS technology. The feature of TC74ACT273 are as follows: (1)high speed: fMAX = 170MHz at VCC = 5V; (2)low power dissipation: ICC = 8A at Ta = 25; (3)compatib...
TC74ACT273: DescriptionThe TC74ACT273 is an adviced high speed CMOS OCTALD-TYPE FILP FLOP frabricated with silicon gate and double-layer metal wiring C2MOS technology. The feature of TC74ACT273 are as follows: ...
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The TC74ACT273 is an adviced high speed CMOS OCTALD-TYPE FILP FLOP frabricated with silicon gate and double-layer metal wiring C2MOS technology. The feature of TC74ACT273 are as follows: (1)high speed: fMAX = 170MHz at VCC = 5V; (2)low power dissipation: ICC = 8A at Ta = 25; (3)compatible with TTL outputs: VIL = 0.8V(min.); (4)symmertrical output impedance: IOH = IOL = 24mA(min), capability of driving 50 transmission lines; (5)balanced propagation delays: tpLHtpHL; (6)wide operating voltage range: VCC(opr) = 2V~5.5V; (7)pin and function compatible with 74F273.
The absolute maximum ratings of the TC74ACT273 are: (1)supply voltage range: -0.5~7.0V; (2)DC input voltage: -0.5~VCC + 0.5V; (3)DC output voltage: -0.5~Vcc + 0.5V; (4)input diode current: ±20mA; (5)output diode current: ±50mA; (6)DC output current: ±50mA; (7)DC Vcc/Ground current: ±200mA; (8)power dissipation: 180mW; (9)storage temperature: -65~150.
The following is about the electrical characteristics of TC74ACT273: (1)high-level input voltage: 2.0V min; (2)low-level input voltage: 0.8V max; (3)high-level output voltage: 4.4V min and 4.5V typical at VIN = VIH or VIL, IOH = -50A, 3.94V min at VIN = VIH or VIL, IOH = -24mA; (4)low-level output voltage: 0.0V typical and 0.1V max at VIN = VIH or VIL, IOH = 50A, 0.36V max at VIN = VIH or VIL, IOH = 24mA; (5)input leakage current: ±0.1A at VIN = 5.5V or GND; (7)quiescent supply current: 1.35mA max at PER INPUT: VIN = 3.4V, OTHER INPUT: VCC or GND.