TC74AC86

DescriptionThe TC74AC86 is an adviced high speed CMOS QUAD EXCLUSIVE OR GATE frabricated with silicon gate and double-layer metal wiring C2MOS technology. The feature of TC74AC86 are as follows: (1)high speed: tpd = 4.4ns at VCC = 5V; (2)low power dissipation: ICC = 4A at Ta = 25; (3)high noise im...

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SeekIC No. : 004514431 Detail

TC74AC86: DescriptionThe TC74AC86 is an adviced high speed CMOS QUAD EXCLUSIVE OR GATE frabricated with silicon gate and double-layer metal wiring C2MOS technology. The feature of TC74AC86 are as follows: (1)...

floor Price/Ceiling Price

Part Number:
TC74AC86
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/1/12

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Product Details

Description



Description

The TC74AC86 is an adviced high speed CMOS QUAD EXCLUSIVE OR GATE frabricated with silicon gate and double-layer metal wiring C2MOS technology. The feature of TC74AC86 are as follows: (1)high speed: tpd = 4.4ns at VCC = 5V; (2)low power dissipation: ICC = 4A at Ta = 25; (3)high noise immunity: VNIH = VNIL = 28% VCC(min); (4)symmertrical output impedance: IOH = IOL = 24mA(min), capability of driving 50 transmission lines; (5)balanced propagation delays: tpLHtpHL; (6)wide operating voltage range: VCC(opr) = 2V~5.5V; (7)pin and function compatible with 74F86.

The absolute maximum ratings of the TC74AC86 are: (1)supply voltage range:  -0.5~7.0V; (2)DC input voltage: -0.5~VCC + 0.5V; (3)DC output voltage: -0.5~Vcc + 0.5V; (4)input diode current: ±20mA; (5)output diode current: ±50mA; (6)DC output current: ±50mA; (7)DC Vcc/Ground current: ±100mA; (8)power dissipation: 180mW; (9)storage temperature: -65~150.

The following is about the electrical characteristics of TC74AC86: (1)high-level input voltage: 1.50V min; (2)low-level input voltage: 0.50V max; (3)high-level output voltage: 1.9V min and 2.0V typical at VIN = VIH or VIL, IOH = -50A, 2.58V min at VIN = VIH or VIL, IOH = -4mA; (4)low-level output voltage: 0.0V typical and 0.1V max at VIN = VIH or VIL, IOH = 50A,  0.36V max at  VIN = VIH or VIL, IOH = 4mA; (5)3-state output off-state current: ±0.25A min and ±2.50A max at VIN = VIH or VIL, VOUT = Vcc or GND; (6)input leakage current: ±0.1A at VIN = 5.5V or GND; (7)quiescent supply current: 4.0A min at VIN = Vcc or GND.

 




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