Features: • High speed: tpd = 4.1 ns (typ.) at VCC = 5 V• Low power dissipation: ICC = 4 A (max) at Ta = 25• High noise immunity: VNIH = VNIL = 28% VCC (min)• Symmetrical output impedance: |IOH| = IOL = 24 mA (min)Capability of driving 50 transmission lines.• Balance...
TC74AC32FT: Features: • High speed: tpd = 4.1 ns (typ.) at VCC = 5 V• Low power dissipation: ICC = 4 A (max) at Ta = 25• High noise immunity: VNIH = VNIL = 28% VCC (min)• Symmetrical out...
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Characteristics |
Symbol |
Rating |
Unit |
Power supply voltage |
VDD |
-0.5~7.0 |
V |
DC input voltage |
VIN |
-0.5 to VCC + 0.5 |
V |
DC output voltage |
VOUT |
-0.5 to VCC + 0.5
|
V |
Input diode current |
IIK |
±20 |
V |
Output diode current |
IOK |
±50 |
mA |
DC output current |
IOUT |
±50 |
mA |
DC VCC/ground current |
ICC/IGND |
±100 |
mA |
Power dissipation |
PD |
500 (DIP) (Note 2)/180 (SOP/TSSOP) |
mW |
Storage temperature |
Tstg |
-65~150 |
Note 1: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 2: 500 mW in the range of Ta = −40 to 65. From Ta = 65 to 85 a derating factor of −10 mW/ should be
applied up to 300 mW.
The TC74AC32FT is an advanced high speed CMOS 2-INPUT OR GATE fabricated with silicon gate and double-layer metal wiring C2MOS technology.
TC74AC32FT achieves the high speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation.
The internal circuit is composed of 2 stages including buffer output, which provide high noise immunity and stable output. All inputs are equipped with protection circuits against static discharge or transient excess voltage.