TC74AC00F

Note 1: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even destruction.

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the Significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Note 2: 500 mW in the range of Ta = −40 to 65. From Ta = 65 to 85 a derating factor of −10 mW/
should be applied up to 300 mW.

AND GATE fabricated with silicon gate and double-layer metal wiring C2MOS technology.

TC74AC00F achieves the high speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power
dissipation.

The internal circuit is composed of 3 stages including buffer output, which provide high noise immunity and stable output.

All inputs of TC74AC00F are equipped with protection circuits against static discharge or transient excess voltage.