TC7320

Features: 􀂉· Six N- and P-channel MOSFET pairs􀂉· Integrated gate-source resistor􀂉· Integrated gate-source zener diode􀂉· Low threshold􀂉· Low on-resistance􀂉· Low input capacitance􀂉· Fast switching speeds􀂉· Free from secondary br...

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SeekIC No. : 004514327 Detail

TC7320: Features: 􀂉· Six N- and P-channel MOSFET pairs􀂉· Integrated gate-source resistor􀂉· Integrated gate-source zener diode􀂉· Low threshold􀂉· Low on-resistance...

floor Price/Ceiling Price

Part Number:
TC7320
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/4

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Product Details

Description



Features:

􀂉· Six N- and P-channel MOSFET pairs
􀂉· Integrated gate-source resistor
􀂉· Integrated gate-source zener diode
􀂉· Low threshold
􀂉· Low on-resistance
􀂉· Low input capacitance
􀂉· Fast switching speeds
􀂉· Free from secondary breakdowns
􀂉· Low input and output leakage



Application

􀂉· High voltage pulsers
􀂉· Amplifiers
􀂉· Buffers
􀂉· Piezoelectric transducer drivers
􀂉· General purpose line drivers
􀂉· Logic level interfaces



Specifications

Drain-to-Source Voltage                                        BVDSS
Drain-to-Gate Voltage                                           BVDGS
Operating and Storage Temperature      -55 to +150
Soldering Temperature*                                         300
*Distance of 1.6mm from case for 10 seconds.



Description

The Supertex TC7320FG consists of a six pairs of high voltage low threshold N-channel and P-channel MOSFETs in a 32-lead LQFP package. All the MOSFETs have integrated gate-source resistors and gate-source zener diode clamps which are desired for high voltage pulser applications. These low threshold enhancement-mode (normally-off) transistors utilize an advanced lateral DMOS structure and Supertex's wellproven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally induced secondary breakdown.

Supertex's lateral DMOS FETs of the TC7320 are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.




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