MOSFET N & P Channel Enhanc ement Dual MOSFET
TC6215TG-G: MOSFET N & P Channel Enhanc ement Dual MOSFET
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Transistor Polarity : | N and P-Channel | Drain-Source Breakdown Voltage : | 150 V, - 150 V |
Gate-Source Breakdown Voltage : | +/- 20 V | Resistance Drain-Source RDS (on) : | 4 Ohms, 7.5 Ohms |
Configuration : | Dual | Maximum Operating Temperature : | + 150 C |
Mounting Style : | SMD/SMT | Package / Case : | SOIC-8 |
Packaging : | Reel |