TC55W800XB7

The TC55W800XB7 is a 8,388,608-bit static random access memory (SRAM) organized as 524,288 words by 16 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this TC55W800XB7 operates from a single 2.3 to 3.3 V power supply. Advanced circuit technology provides both high speed and low power at an operating current of 3 mA/MHz and a minimum cycle time of 70 ns. It is automatically placed in low-power mode at 0.5 A standby current (at V_DD = 3 V, Ta = 25°C, maximum) when chip enable (CE1 ) is asserted high or (CE2) is asserted low.  There are three control inputs. CE1 and CE2 are used to select the device and for data retention control, and output enable (OE ) provides fast memory access. Data byte control pin (LB , UB ) provides lower and upper byte access. ThisTC55W800XB7 is well suited to various microprocessor system applications where high speed, low power and battery backup are required. And, with a guaranteed operating extreme temperature range of −40° to 85°C, the TC55W800XB can be used in environments exhibiting extreme temperature conditions. The TC55W800XB7 is available in a plastic 48-ball BGA.