TC55W800FT-55

The TC55W800FT-55is a 8,388,608-bit static random access memory (SRAM) organized as 524,288 words by 16 bits/1,048,576 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 2.3 to 3.3 V power supply. Advanced circuit technology provides both high speed and low ower at an operating current of 3 mA/MHz and a minimum cycle time of 55 ns. TC55W800FT-55 is automatically placed in low-power mode at 0.5
A standby current (at VDD =3 V, Ta = 25°C, maximum) when chip enable (CE1 ) is asserted high or (CE2) is asserted low. There are three control inputs. CE1 and CE2 are used to select the device and for data retention control, and output enable (OE ) provides fast memory access. Data byte control pin (LB , UB ) provides lower and upper byte access. This TC55W800FT-55 is well suited to various microprocessor system applications where high speed, low power and battery backup are required. And, with a guaranteed operating extreme mperature range of -40° to 85°C, the TC55W800FT-55 can be used in environments exhibiting extreme temperature conditions. The TC55W800FT is available in a plastic 48-pin thin-small-outline package (TSOP).