Features: • Fast access time (the following are maximum values) TC55VZM216AJJN/AFTN08:8 ns TC55VZM216AJJN/AFTN10:10 ns TC55VZM216AJJN/AFTN12:12 ns• Low-power dissipation (IDDO2) (the following are maximum values)• Single power supply voltage of 3.3 V ± 0.3 V• Fully static o...
TC55VZM216AJJN08: Features: • Fast access time (the following are maximum values) TC55VZM216AJJN/AFTN08:8 ns TC55VZM216AJJN/AFTN10:10 ns TC55VZM216AJJN/AFTN12:12 ns• Low-power dissipation (IDDO2) (the fol...
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Features: Very Low Dropout Voltage....120mV typ at 100mA 380mV typ at 200mAHigh Output Current.......
Features: • Low power dissipation: 27.5mW/MHz (typ.)• Standby current: 4m A (max.) at ...
SYMBOL |
RATING |
VALUE |
UNIT |
VDD |
Power Supply Voltage |
−0.5 to 4.6 |
V |
VIN |
Input Terminal Voltage |
−0.5* to 4.6 |
V |
VI/O |
Input/Output Terminal Voltage |
−0.5* to VDD + 0.5** |
V |
PD |
Power Dissipation |
1.4 |
W |
Tsolder |
Soldering Temperature (10s) |
260 |
°C |
Tstg |
Storage Temperature |
−65 to 150 |
°C |
Topr |
Operating Temperature |
−40 to 100 |
°C |
The TC55VZM216AJJN08 is a 4,194,304-bit high-speed static random access memory (SRAM) organized as 262,144 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, TC55VZM216AJJN08 operates from a single 3.3 V power supply. Chip enable (CE ) can be used to place the device in a low-power mode, and output enable (OE ) provides fast memory access. Data byte control signals ( LB , UB) provide lower and upper byte access. This device is well suited to cache memory applications where high-speed access and high-speed storage are required. All inputs and outputs are directly LVTTL compatible. The TC55VZM216AJJN08 is available in plastic 44-pin SOJ and TSOP with 400mil width for high density surface assembly.