TC55VZM216AJJN08

Features: • Fast access time (the following are maximum values) TC55VZM216AJJN/AFTN08:8 ns TC55VZM216AJJN/AFTN10:10 ns TC55VZM216AJJN/AFTN12:12 ns• Low-power dissipation (IDDO2) (the following are maximum values)• Single power supply voltage of 3.3 V ± 0.3 V• Fully static o...

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TC55VZM216AJJN08 Picture
SeekIC No. : 004514163 Detail

TC55VZM216AJJN08: Features: • Fast access time (the following are maximum values) TC55VZM216AJJN/AFTN08:8 ns TC55VZM216AJJN/AFTN10:10 ns TC55VZM216AJJN/AFTN12:12 ns• Low-power dissipation (IDDO2) (the fol...

floor Price/Ceiling Price

Part Number:
TC55VZM216AJJN08
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/1/12

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Product Details

Description



Features:

• Fast access time (the following are maximum values)
    TC55VZM216AJJN/AFTN08:8 ns
    TC55VZM216AJJN/AFTN10:10 ns
    TC55VZM216AJJN/AFTN12:12 ns
• Low-power dissipation (IDDO2)
   (the following are maximum values)
• Single power supply voltage of 3.3 V ± 0.3 V
• Fully static operation
• All inputs and outputs are LVTTL compatible
• Output buffer control using OE
• Data byte control using LB (I/O1 to I/O8) and UB (I/O9 to I/O16)
• Package:
    SOJ44-P-400-1.27 (AJJN)     (Weight: 1.64 g typ)
    TSOP II44-P-400-0.80 (AFTN) (Weight: 0.45 g typ)



Pinout

  Connection Diagram


Specifications

SYMBOL
RATING
VALUE
UNIT
VDD
Power Supply Voltage
−0.5 to 4.6
V
VIN
Input Terminal Voltage
−0.5* to 4.6
V
VI/O
Input/Output Terminal Voltage
−0.5* to VDD + 0.5**
V
PD
Power Dissipation
1.4
W
Tsolder
Soldering Temperature (10s)
260
°C
Tstg
Storage Temperature
−65 to 150
°C
Topr
Operating Temperature
−40 to 100
°C



Description

The TC55VZM216AJJN08 is a 4,194,304-bit high-speed static random access memory (SRAM) organized as 262,144 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, TC55VZM216AJJN08 operates from a single 3.3 V power supply. Chip enable (CE ) can be used to place the device in a low-power mode, and output enable (OE ) provides fast memory access. Data byte control signals ( LB , UB) provide lower and upper byte access. This device is well suited to cache memory applications where high-speed access and high-speed storage are required. All inputs and outputs are directly LVTTL compatible. The TC55VZM216AJJN08 is available in plastic 44-pin SOJ and TSOP with 400mil width for high density surface assembly.




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