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TC55VZM216AFTN12

Features: • Fast access time (the following are maximum values) TC55VZM216AJJN/AFTN08:8 ns TC55VZM216AJJN/AFTN10:10 ns TC55VZM216AJJN/AFTN12:12 ns• Low-power dissipation (IDDO2)• Single power supply voltage of 3.3 V ± 0.3 V• Fully static operation• All inputs and outp...

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SeekIC No. : 004514161 Detail

TC55VZM216AFTN12: Features: • Fast access time (the following are maximum values) TC55VZM216AJJN/AFTN08:8 ns TC55VZM216AJJN/AFTN10:10 ns TC55VZM216AJJN/AFTN12:12 ns• Low-power dissipation (IDDO2)• S...

TC55VZM216AFTN12 Data Sheet

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Part Number:
TC55VZM216AFTN12
Supply Ability:
5000

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  • 1~5000
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  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Fast access time (the following are maximum values)
  TC55VZM216AJJN/AFTN08:8 ns
  TC55VZM216AJJN/AFTN10:10 ns
  TC55VZM216AJJN/AFTN12:12 ns
• Low-power dissipation (IDDO2)
• Single power supply voltage of 3.3 V ± 0.3 V
• Fully static operation
• All inputs and outputs are LVTTL compatible
• Output buffer control using OE
• Data byte control using LB (I/O1 to I/O8) and UB (I/O9 to I/O16)
• Package:
  SOJ44-P-400-1.27 (AJJN) (Weight: 1.64 g typ)
  TSOP II44-P-400-0.80 (AFTN) (Weight: 0.45 g typ)


Pinout

Connection Diagram




Specifications

SYMBOL RATING VALUE UNIT
VDD Power Supply Voltage −0.5 to 4.6 V
VIN Input Terminal Voltage −0.5* to 4.6 V
VI/O Input/Output Terminal Voltage −0.5* to VDD + 0.5** V
PD Power Dissipation 1.4 W
Tsolder Soldering Temperature (10s) 260 °C
Tstg Storage Temperature −65 to 150 °C
Topr Operating Temperature −10 to 85 °C

*: −1.5 V with a pulse width of 20% of tRC min (4 ns max)
**: VDD + 1.5 V with a pulse width of 20% of tRC min (4 ns max)




Description

The TC55VZM216AFTN12 is a 4,194,304-bit high-speed static random access memory (SRAM) organized as 262,144 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it operates from a single 3.3 V power supply. Chip enable (CE ) can be used to place the device in a low-power mode, and output enable (OE ) provides fast memory access. Data byte control signals ( LB , UB) provide lower and upper byte access. This TC55VZM216AFTN12 is well suited to cache memory applications where high-speed access and high-speed storage are required. All inputs and outputs are directly LVTTL compatible. The TC55VZM216AFTN12 is available in plastic 44-pin SOJ and TSOP with 400mil width for high density surface assembly




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