TC55VEM316AXBN

Features:

• Low-power dissipationOperating: 9 mW/MHz (typical)
• Single power supply voltage of 2.3 to 3.6 V
• Power down features usingCE1 and CE2
• Data retention supply voltage of 1.5 to 3.6 V
• Direct TTL compatibility for all inputs and outputs
• Wide operating temperature range of −40° to 85°C


Specifications

SYMBOL	RATING	VALUE	UNIT
VDD	Power Supply Voltage	−0.3~4.2	V
VIN	Input Voltage	−0.3*~4.2	V
VI/O	Input/Output Voltage	−0.5~VDD + 0.5	V
PD	Power Dissipation	0.6	W
Tsolder	Soldering Temperature (10s)	260	°C
Tstg	Storage Temperature	−55~125	°C
Topr	Operating Temperature	−40~85	°C

*: −2.0 V when measured at a pulse width of 20ns


Description

The TC55VEM316AXBN is a 8,388,608-bit static random access memory (SRAM) organized as 524,288 words by 16 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 2.3 to 3.6 V power supply. Advanced circuit technology provides both high speed and low power at an operating current of 3 mA/MHz and a minimum cycle time of 40 ns. TC55VEM316AXBN is automatically placed in low-power mode at 0.7 A standby current (at VDD = 3 V, Ta = 25°C, typical) when chip enable (CE1 ) is asserted high or (CE2) is asserted low. There are three control inputs. CE1 and CE2 are used to select the device and for data retention control, and output enable (OE ) provides fast memory access. Data byte control pin ( LB , UB ) provides lower and upper byte access.This device is well suited to various microprocessor system applications where high speed, low power and battery backup are required. And, with a guaranteed operating extreme temperature range of −40° to 85°C, the TC55VEM316AXBN can be used in environments exhibiting extreme temperature conditions. The TC55VEM316AXBN is available in a plastic 48-ball BGA.