TC55VEM208ASTN55

Features:

  Low-power dissipation Operating: 9 mW/MHz (typical) 
  Single power supply voltage of 2.3 to 3.6 V 
  Power down features using CE 
  Data retention supply voltage of 1.5 to 3.6 V 
  Direct TTL compatibility for all inputs and outputs 
  Wide operating temperature range of -40 to 85
  Standby Current (maximum):


Pinout




Specifications

SYMBOL	RATING	VALUE	UNIT
VDD	Power Supply Voltage	-0.3~4.2	V
VIN	Input Voltage	-0.3*~4.2	V
VI/O	Input/Output Voltage	-0.5~VDD + 0.5	V
PD	Power Dissipation	0.6	W
Tsolder	Soldering Temperature (10s)	260
Tstg	Storage Temperature	-55~150
Topr	Operating Temperature	-40~85

Description

The TC55VEM208ASTN55 is a 4,194,304-bit static random access memory (SRAM) organized as 524,288 words by  8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 2.3 to  3.6 V power supply. Advanced circuit technology provides both high speed and low power at an operating current of  3 mA/MHz (typ) and a minimum cycle time of 40 ns. TC55VEM208ASTN55 is automatically placed in low-power mode at 0.7 A standby  current (typ) when chip enable (CE) is asserted high. There are two control inputs.  CE is used to select the device
OE) provides fast memory access. This TC55VEM208ASTN55 is well suited to  and for data retention control, and output enable ( various microprocessor system applications where high speed, low power and battery backup are required. The
TC55VEM208ASTN55 is available in a plastic 32-pin thin-small-outline package (TSOP).