TC55VCM316BTGN55

The TC55VCM316BTGN55 is designed as one kind of 4,194,304-bit static random access memory (SRAM) device that is organized as 524,288 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this TC55VCM316BTGN55 operates from a single 2.3 to 3.6 V power supply. Also it is available in a plastic 40-pin thin-small outline package (TSOP).

Features of the TC55VCM316BTGN55 are:(1)Low-power dissipation Operating: 9 mW/MHz (typical); (2)Single power supply voltage of 2.3 to 3.6 V; (3)Power down features usingCE1 and CE2; (4)Data retention supply voltage of 1.5 to 3.6 V; (5)Direct TTL compatibility for all inputs and outputs; (6)Wide operating temperature range of -40 to 85 .

The absolute maximum ratings of the TC55VCM316BTGN55 can be summarized as:(1)Power Supply Voltage: -0.3 to 4.2 V;(2)Input Voltage: -0.3 to 4.2 V;(3)Input/Output Voltage: -0.5 to VDD+0.5 V;(4)Power Dissipation: 0.6 W;(5)Soldering Temperature (10s): 260 °C;(6)Storage Temperature: -55 to 150 °C;(7)Operating Temperature: -40 to 85 °C. If you want to know more information such as the electrical characteristics about the TC55VCM316BTGN55, please download the datasheet in www.seekic.com or www.chinaicmart.com.