TC55VCM216ASTN55

The TC55VCM216ASTN55 is a 4,194,304-bit static random access memory (SRAM) organized as 262,144 words by 16 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 2.3 to 3.6 V power supply. Advanced circuit technology provides both high speed and low power at an operating current of 3 mA/MHz and a minimum cycle time of 40 ns. TC55VCM216ASTN55 is automatically placed in low-power mode at 0.7 µA standby current (at VDD = 3 V, Ta = 25°C, typical) when chip enable (CE1 ) is asserted high or (CE2) is asserted low. There are three control inputs. CE1 and CE2 are used to select the device and for data retention control, and output enable (OE ) provides fast memory access. Data byte control pin ( LB , UB ) provides lower and upper byte access. This TC55VCM216ASTN55 is well suited to various microprocessor system applications where high speed, low power and battery backup are required. And, with a guaranteed operating extreme temperature range of −40° to 85°C, the TC55VCM216ASTN can be used in environments exhibiting extreme temperature conditions. The TC55VCM216ASTN55 is available in a plastic 48-pin thin-small-outline package (TSOP).