TC55VBM416ASGN55

The TC55VBM416ASGN55 is designed as one kind of 16,777,216-bit static random access memory (SRAM) that is well suited to various microprocessor system applications where high speed, low power and battery backup are required, and is available in a plastic 48-pin thin-small-outline package (TSOP).

Features of the TC55VBM416ASGN55 are:(1)low-power dissipation operating: 9 mW/MHz (typical); (2)single power supply voltage of 2.3 to 3.6 V; (3)power down features using CE1 and CE2; (4)data retention supply voltage of 1.5 to 3.6 V; (5)direct TTL compatibility for all inputs and outputs; (6)wide operating temperature range of -40 to 85 .

The absolute maximum ratings of the TC55VBM416ASGN55 can be summarized as:(1)Power Supply Voltage: -0.3 to 4.2 V;(2)Input Voltage: -0.3 to 4.2 V;(3)Input / Output Voltage: -0.5 to VDD+0.5 V;(4)Power Dissipation: 0.6 W;(5)Soldering Temperature (10s): 260 °C;(6)Storage Temperature: -55 to 150 °C;(7)Operating Temperature: -40 to 85 °C.

The electrical characteristics of this TC55VBM416ASGN55 can be summarized as:(1)Input Leakage Current: ±1.0 A;(2)Output High Current: -0.5 mA;(3)Output Low Current: 2.1 mA;(4)Output Leakage Current: ±1.0 A;(5)Input Capacitance: 10 pF;(6)Output Capacitance: 10 pF;(7)Read Cycle Time: 55 ns;(8)Address Access Time: 55 ns. If you want to know more information about TC55VBM416ASGN55, please download the datasheet in www.seekic.com or www.chinaicmart.com .